Fabrication and Characterization of Bi-epitaxial Grain Boundary Junctions in YBa_2Cu_3O_<7δ> (Special Issue on High-Temperature Superconducting Electronics)

概要

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We have fabricated bi-epitaxial grain boundary junctions in YBa_2Cu_3O_<7-δ> (YBCO) thin films by using SrTiO_3 (STO) seed layers on MgO (100) substrate. YBCO film growing over the STO seed layer has a different in-plane orientation from YBCO film without the seed layer, so artificial grain boundaries were created at the edge of the seed layer. The fabricated junctions have high T_c (up to 80 K), and constant-voltage current steps are observed in response to 12.1 GHz microwave radiation. Moreover, some of the junctions show characteristic current-voltage curves comprising not only an usual Josephson-like characteristic but also a low critical current due to the flux creep. This suggests that the two characteristic parts are likely to be connected in series at the junction region.
社団法人電子情報通信学会の論文
1993-08-25