Superconductor-Base Hot-Electron Transistor : I. Theory and Design
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概要
- 論文の詳細を見る
This paper proposes a theoretical design for a superconductor-base hot-electron transistor (Super-HET), a new device which can be regarded as one of the ultimate hot-electron transistors. Our study reveals that a Super-HET with a GaAs/Nb-based compounds/InSb/metal structure has excellent characteristics, although it works only in a limited temperature range. The total current transmission coefficient and the maximum oscillation frequency are predicted to be more than 96% and in excess of 1000 GHz, respectively. The estimation and design are performed taking into account the quantum mechanical reflection effect, the hot-electron mean free path in superconductor and semiconductor, Monte Carlo simulation, and unilateral power gain.
- 社団法人応用物理学会の論文
- 1986-05-20
著者
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Sakai Hiroyuki
Central Research Laboratory Rasa Industries
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KOBAYASHI Takeshi
Faculty of Engineering Science, Osaka University
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TONOUCHI Masayoshi
Faculty of Engineering Science, Osaka University
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SAKAI Hiroyuki
Faculty of Engineering Science, Osaka university
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Kobayashi Takeshi
Faculty Of Engineering Science Department Of Electrical Engineering Osaka University
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