Growth of Ru0_2 Thin Films on a MgO Substrate by Pulsed Baser Deposition Method

概要

論文の詳細を見る
Ru0_2 thin films have been grown on (100)MgO substrates by the pulsed laser deposition (PLD) method. X-ray diffraction (XRD) and Reflection high-energy electron diffraction (RHEED) measurements showed that the RuO_2 thin film were (110) oriented and in-plane ordered (epitaxially grown). The electrical and optical properties of the Ru0_2 have been studied. Temperatures above 6O0℃ were required for growth of high quality films. When grown at 70O℃, the films exhibited resistivities as low as 39 μΩ・cm at room temperature. The real and imaginary parts of the dielectric constant and complex refractive index for Ru0_2 thin films were estimated in the photon energy range from 1.5 to 4.5 eV by spectroscopic ellipsometry measurements. A transition from the valence band to the conduction band was observed for Ru0_2 thin films near 2.7eV and the dependence of the refractive index on the deposition temperature was also observed.
社団法人応用物理学会の論文
1997-04-15