Interfacial Degradation of Insulator/YBa_2Cu_3O_y Heterostructure due to Mutual Diffusion of Constituent Atoms
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概要
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The interfacial degradation of the insulator (SrTiO_3, BaTiO_3, PbTiO_3, and BaO etc.)/YBa_2Cu_3O_y hetero-structures during excimer-laser deposition and subsequent annealing has been investigated. The secondary-ion mass spectroscopy (SIMS) measurement revealed, though very crudely, the mutual diffusion of constituent atoms. More precise data have been obtained quantitatively by measuring the change of the zero-resistance temperatures T_<cO>'s (Kosterlitz-Thoules transition) of ultrathin YBa_2Cu_3O_y before and after deposition of the insulating layers and annealing. The interfacial degradation developed with time t as t^<〜0.4>, reflecting the thermal diffusion of constituents. The degradation also depended on the partnering insulating layer, i.e., it was minimized by BaTiO_3 and PbTiO_3 (lower-melting-point insulators).
- 社団法人応用物理学会の論文
- 1995-01-01
著者
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KOBAYASHI Takeshi
Faculty of Engineering Science, Osaka University
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Tomohisa Shingo
Faculty Of Engineering Science Osaka University
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ASHIDA Takeshi
Faculty of Engineering Science, Osaka University
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Ashida Takeshi
Faculty Of Engineering Science Osaka University
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Kobayashi Takeshi
Faculty Of Engineering Science Department Of Electrical Engineering Osaka University
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