Quantum Analysis of Hole Distribution in Multiple-Delta-Doped Diamond with a Deep Impurity Level
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概要
- 論文の詳細を見る
Multiple-delta-doping (MDD) in synthetic diamond films is studied analytically from the quantum-mechanical point of view by solving Schroedinger's and Poisson's equations simultaneously and self-consistently. From the analysis, a series of wave functions and subbands are determined, and more accurate distribution of holes than from the classical-mechanical point of view is obtained. In MDD diamond films at 500 K, in spite of the deep impurity level, hole excitation efficiency rises to 4 -5 times that of uniformly doped films. Moreover, 95% of holes are located in the nondoped layer where the mobility is high. These two beneficial features of MDD markedly improve the conductance as compared with that of uniformly doped diamond films.
- 社団法人応用物理学会の論文
- 1995-08-15
著者
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KOBAYASHI Takeshi
Faculty of Engineering Science, Osaka University
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ARIKI Takuya
Faculty of Engineering Science, Osaka University
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Ariki T
Faculty Of Engineering Science Osaka University
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Ariki Takuya
Faculty Of Engineering Science Osaka University
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ANDA Yoshiharu
Faculty of Engineering Science, Osaka University
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Anda Y
Osaka Univ. Osaka Jpn
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Anda Yoshiharu
Faculty Of Engineering Science Osaka University
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Kobayashi Takeshi
Faculty Of Engineering Science Department Of Electrical Engineering Osaka University
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