Carrier-Waves in Semiconductors with Velocity Distributions

概要

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The properties of carrier-waves in semiconductors are investigated. The linearized Boltzmann equation involving the dc electric field and the collision term is solved for spatial problems in which the complex wave number k is sought for a given frequency ω. The collision term is contrived to be applicable to semiconductors including the lattice scatterings and the electron-electron collisions. The detailed calculation is carried out for the case of dominant lattice scatterings. The unperturbed velocity distribution of carriers is assumed to be a drifted-Maxwellian. Even for spatial problems, carrier-waves can be described approximately in terms of plane waves exp (ikx-iωt) only if the collision frequency ν>ω. If ν<50_<ω-p>, the effects of the carrier velocity distribution involving the Landau damping appear explicitly in the usual frequency range, where ω-p is the plasma frequency. The effect of the dc field acceleration results in increasing the attenuation of the carrier-waves.
社団法人日本物理学会の論文
1972-11-05