高周波バイアスを用いた高密度プラズマエッチャー内壁における膜堆積抑制

概要

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For improvement of process repeatability in high-density plasma oxide etcher, forced potential oscillation of the plasma by a RF circuit was proposed to keep the wall surface condition based on suppression of polymer deposition by ion bombardment. The RF bias power was applied to a metal plate terminated an inductance. This allowed us to reduce the polymer deposition rate even on the grounded wall of the etcher. When the bias was turned on, neutral fluorocarbon (CF_x, x=1-3) and atomic fluorine (F) radicals were desorbed from the wall, corresponding to the decrease in the deposition rate. However, plasma potential measurements revealed that charge-up problems, which lower the ion bombarding, were still remained since the oscillation amplitude of the plasma potential was much lower than the time-averaged plasma potential under the present condition. It was suggested that the optimization of wall area ratio for the bias plate and grounded chamber is effective to solve the charge-up problem.
社団法人プラズマ・核融合学会の論文
2000-09-25