Co_<90>Fe_<10>/SrTiO_3/La_<0.7>Sr_<0.3>MnO_3接合におけるインバースTMR効果のバイアス依存性 : 磁気抵抗効果・交換結合

概要

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The asymmetric bias voltage dependence of the tunneling magnetoresistance (TMR) effect in Mn_<80>Ir_<20>/Ni_<80>Fe_<20>/Co_<90>Fe_<10>/SrTiO_3/La_<0.7>Sr_<0.3>MnO_3(LSMO) junctions was investigated. The bias voltage dependence of the TMR effect depended on a chemical composition of SrTiO_3 (STO) barrier. In our previous report, the origin of the asymmetric bias voltage dependence of the TMR effect in such junctions was accounted for by the density of states of CoFe. However, it is necessary to consider the influences of the electronic structure in STO/LSMO, CoFe/STO interfaces, and oxygen deficiency in the STO barrier.
社団法人日本磁気学会の論文
2002-04-01