微細加工されたLa_<0.7>Sr_<0.3>MnO_3薄膜のアニールによる回復効果

概要

論文の詳細を見る
To establish a technique for fabricating microstructural devices using half"metallic manganese oxides without any negative effect of microfabrication, we investigated the effects of defects in Lao.7Sro.3Mn03 film caused by Ar ion milling and a method for removing them by means of annealing. Our results show that Ar ion milling results in a resistance increase of up to several orders in magnitude with a damage depth of about 40 nm. We found that annealing in oxygen atmosphere corrects these problems almost completely. Furthermore, we actually fabricated model devices and demonstrated that undamaged devices can be fabricated by annealing in oxygen after the milling process.
社団法人日本磁気学会の論文
2007-07-01