ホイスラー合金Co_2MnSi薄膜の作製とその磁性(薄膜)

概要

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The structural and magnetic properties of Co_2MnSi thin film grown by the ion beam sputtering method were investigated. Films grown on glass substrate at temperatures from 300 ℃ to 600 ℃ were polycrystalline, as were films grown on Si (100) and :MgO (100) substrates at 600 ℃. The crystalline quality of the film improved with increasing substrate temperature. Film grown at 600 ℃ showed the largest magnetization near the bulk value. On the other hand, film with the preferred orientation to the (001) plane was obtained by growing a Ta buffer layer before the growth of Co_2MnSi film on any substrates. The saturation magnetization increased with the increase of substrate temperature. This fact is considered to be due to the increase of the long-range order parameter.
社団法人日本磁気学会の論文
2004-04-01