Co基ホイスラー合金を用いたGMR積層膜の作製(薄膜・微粒子・多層膜・人工格子)

概要

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GMR multilayer films using Co_2MnGe(CMG) and Mn-Ir / CMG exchange-coupled films were fabricated on thermally oxidized Si substrate, and their crystal orientation, magnetic properties, and interfacial roughness were investigated. The main results are stated as follows, (1) (100) oriented MnIr / CMG exchange-coupled films were realized when Ni-Ta underlayer / Cr buffer layer were deposited on thermally oxidized Si substrate. After thermal annealing for 2h at 250 ℃ in a magnetic field of 5 kOe, the unidirectional anisotropy constant (J_k) of bilayers was 0.13 erg/cm^2. (2) Dependence of saturation field (H_s) on Cr thickness for GMR films with (100) oriented CMG / Cr / CMG trilayer was investigated. H_s was minimum when Cr thickness was 1 nm and 5 nm. (3) Surface roughness (R_a) of Ni-Ta 5 nm on Al-Cr bottom electrode layer (100 nm) was 0.108 nm. (4) Flat and (100) oriented CMG / Cr films was formed on Al-Cr bottom electrode layer (100 nm) / Ni-Ta underlayer (15 nm) / Cr buffer layer (60 nm) when Cr content of the Al-Cr layer was 18.7-24.6 at%.
社団法人日本磁気学会の論文
2008-05-01