非単結晶基板上における(100)高配向Co_2MnGe薄膜及びそれを用いた強磁性体トンネル接合の作製

概要

論文の詳細を見る
The fabrication of highly (100) oriented Co_2MnGe thin film by using a Cr buffer layer and an underlayer deposited under various conditions on a thermally oxidized Si substrate was investigated. The main results are as follows : (1) The Cr buffer layer deposited under optimized conditions had a strong (100) orientation on the Ni-Ta underlayer. (2) The Co_2MnGe layer had a strong (100) orientation on the (100) oriented Cr buffer layer with a large saturation magnetization of 860 emu/cc, which is almost the same as the case of the (100) epitaxial Co_2MnGe layer fabricated on an MgO (100) substrate. As a result, we succeeded in fabricating a magnetic tunnel junction of MnIr(100)/Co_2MnGe(100)/MgO(100)/Co_2MnGe(100)/Cr(100) with a low surface roughness on a thermally oxidized Si substrate.
社団法人日本磁気学会の論文
2008-01-01