強磁性トンネル接合Fe/CeO_2/Fe-Coの磁気抵抗効果とXPS観察

概要

論文の詳細を見る
A series of Fe/CeO_2/Fe-Co tunnel junctions with CeO_2 barrir layers ranging from 30 to 90 A in thickness were prepared by ion beam sputtering (IBS). Some Fe/Al oxide/Fe-Co tunnel junctions were also made, to compare the junction properties. The inteface of the Fe/CeO_2 bilayer was investigated by means of X-ray photoelectron spectrscopy (XPS). Some junctions with a CeO_2 barrier layer showed the ferromagnetic tunneling effect. The resistance of junctions with a CeO_2 barrier layer was higher thab that of junctions with an Al oxide barrier.CeO_2 was decomposed into Ce and O_2 by sputtering, and Fe was oxidized by sputtering O_2 molecules on the substrate.The remaining Ce in the barrier layer reduced the junction resistance.
社団法人日本磁気学会の論文
1998-04-15