Three-Dimensional Jets Issuing from Cruciform Nozzles having four aspect rartio : 1st Report, Mean Flow Properties
スポンサーリンク
概要
- 論文の詳細を見る
- 一般社団法人日本機械学会の論文
- 1987-12-16
著者
-
Fujita Shigetaka
Department Of Electrical And Electronic Engineering Faculty Of Engineering Hachinohe Institute Of Te
-
Fujita Shigetaka
Department Of Mechanical And Electronic Engineering Tokuyama Technology College
-
Osaka Hideo
Department Of Mechanical Engineering
関連論文
- Influence of Ultraviolet-ray Irradiation on the Mechanical and Electrical Properties of Polylactic Acid
- 5a-E-2 GaN量子ドットの多励起子効果
- 29a-K-3 II-VI族量子井戸構造の高密度励起下における時間分解分光
- 光MOVPE成長ZnSeの熱処理効果と評価
- Alg_3薄膜のキャリア伝導
- 時間分解分光によるInGaN量子井戸構造の発光ダイナミクス
- Optical Properties of ZnCdSe/ZnSSe Strained-Layer Quantum Wells
- Estimation of Critical Thicknesses and Band Lineups in ZnCdSe/ZnSSe Strained-Layer System for Design of Carrier Confinement Quantum Well Structures
- Metalorganic Molecular Beam Epitaxy of Zn_Cd_xS_ySe_ Quaternary Alloys on GaAs Substrate
- On the Properties of ZnSe/(NH_4)_2S_x-Pretreated GaAs Heterointerfaces
- Optically Pumped Blue-Green Laser Operation Above Room-Temperature in Zn_Cd_Se-ZnS_Se_ Multiple Quantum Well Structures Grown by Metalorganic Molecular Beam Epitaxy
- Growth and Optical Properties of Novel Wide-Band-Gap Strained-Layer Single Quantum Wells: Zn_Cd_ySe/ZnS_xSe_
- InGaN量子井戸発光デバイスのふく射再結合機構 (ワイドギャップ半導体とそのデバイス応用論文小特集)
- InGaN量子井戸発光デバイスにおける自然および誘導放出機構
- InGaN量子井戸発光デバイスにおける自然および誘導放出機構
- InGaN量子井戸構造の強励起下における発光ダイナミクス
- InGaN量子井戸構造の強励起下における発光ダイナミクス
- III-V窒化物系とII-VI族系量子井戸の励起子光物性
- III-V窒化物系とII-VI族系量子井戸の励起子光物性
- GaN/SiC基板上GaN系半導体のMBE成長
- Synthesis of BaTiO_3 Thin Films Substituted with Hafnium and Zirconium by a Laser Ablation Method Using the Fourth-harmonic Wave of a YAG Laser
- Zn(S,Se)-GaAsヘテロエピタキシャル成長と積層構造の作製 : エピタキシーI
- Preparation and Electrical Properties of PZT Thin Film Capacitors for Ferroelectric Random Access Memory
- Preparation of La-Modified Lead Titanate Film Capacitors and Influence of SrRuO_3 Electrodes on the Electrical Properties
- 有機薄膜マルチ構造の真空作製と発光ダイナミクス
- Zn系薄膜の各種作製法とその諸特性
- GaAs(001)基板上六方晶GaNのMOVPE成長とウェハ融着によるGaN/Si構造作製への応用
- GaAs(001)基板上六方晶GaNのMOVPE成長とウェハ融着によるGaN/Si構造作製への応用
- OME2000-52 有機EL薄膜へのC_添加効果
- MOVPE成長した立方晶GaNへの六方晶成分の混入
- MOVPE成長した立方晶GaNへの六方晶成分の混入
- 原子価不整合系の半導体へテロ構造におけるバンド不連続量の制御
- ZuSe/GaAsおよびGaAs/ZuSe有機金属気相成長と電気的特性の評価
- Comparative Study of Photoluminescence Dynamics of Tris (8-hydroxyquinoline) Aluminum-Based Organic Miltilayer Structures with Different Types of Energy Lineups
- Photoluminescence Dynamics of Aluminumquinoline/Oxadiazole Multilayer Structures
- Optical Properties of Aluminumquinoline-Oxadiazole Codeposited Luminescent Layers
- Growth of GaN on Indium Tin Oxide/Glass Substrates by RF Plasma-Enhanced Chemical Vapor Deposition Method
- Molecular Beam Epitaxial Growth Behaviors of Zn1-xCdxSe on the GaAs(110)Surface Cleaved in Ultra High Vacuum (第37回真空に関する連合講演会プロシ-ディングス(1996年10月30日〜11月1日,大阪))
- (2×6) Surface Reconstruction of GaAs (001) Obtained by Hydrogen Sulfide Irradiation
- Reflection High Energy Electron Diffraction Intensity Oscillations during the Growth of ZnSe on Cleaved GaAs(110) Surface by Molecular Beam Epitaxy
- Recombination Dynarmics in Zn_xCd_S Single Quantum Well Grown by Photoassisted Metalorganic Vapour Phase Epitaxy by Time-Resolved Photoluminescence Spectroscopy
- Optical Properties of ZnSe/ZnMgSSe Single Quantum Wells Grown by Metalorganic Molecular Beam Epitaxy
- Gas-Source Molecular Beam Epitaxial Growth of (Zn, Mg)(S, Se) Using Bis-methylcyclopentadienyl-magnesium and Hydrogen Sulfide
- Near-UV Electroluminescence from a ZnCdSSe/ZnSSe Metal-Insulator-Semiconductor Diode on GaP Grown by Molecular Beam Epitaxy
- Photoluminescence Excitation Spectroscopy of the Lasing Transition in Zn_Cd_Se-ZnS_Se_ Multiple Quantum Wells
- Carrier Injection Characteristics in Diamine/ZnSe Organic-Inorganic Thin-Film Heterostructures for Blue Electroluminescence
- Growth and Characterization of Strained-Layer Quantum Wells with Wide Gap ZnCdSSe Alloy System
- 第5回「科学と生活のフェスティバル」の報告
- Ferroelectric and Pyroelectric Properties of Ba_Pb_x Ti_(Hf_,Zr_)_O_3 Thin Films : Electrical Properties of Condensed Matter
- Ferroelectric SrxBa1-xNb2O6 Synthesized by YAG Laser Deposition
- Preparation and Ferroelectric Properties of BaTiO3 Related Thin Films
- Preparation and Ferroelectric Properties of Ti-Site Substituted BaTiO_3 Thin Films
- The Role of Growth Rates and Buffer Layer Structures for Quality Improvement of Cubic GaN Grown on GaAs
- Properties and Degradation of Polarization Reversal of Soft BaTiO_3 Ceramics for Ferroelectric Thin-Film Devices
- CdSe/ZnSe/ZnSSe 単一量子井戸における局在励起子の時間分解発光特性および青緑色発光ダイオードの作製
- Formation of an Atomically Flat Surface of ZnSe on GaAs(001) by Metalorganic Vapor Phase Epitaxy
- The effect of step change in surface roughness on a channel flow
- Self-preservation of a turbulent boundary layer over d-type roughness
- ZnMgSSeのMOMBE成長と評価
- Structure of the pulsatile blood flow in the vascular with a rough wall
- Multiple correlation of a two-dimensional turbulent wake
- Turbulence measurements in a two-dimensional turbulent wake
- The Coherent Structure of a Plane Turbulent Wall Jet : Analysis with the Four-Quadrant Method : Series B : Fluid Engineering, Heat Transfer, Combustion, Power, Thermophysical Properties
- The Coherent Structure of a Plene Turbulent Wall Jet (Analysis with the VITA Technique and Time Domain Method) : Series B : Fluids Engineering, Heat Transfer, Combustion, Power, Thermophysical Properties
- GaAs(110)面上への高品質ZnSe系半導体のMBE成長
- Growth Behavior of GaAs in Metalorganic Vapor Phase Epitaxy onto ZnSe
- Structural Analysis of ZnSe-GaAs Quantum Wells
- ミストデポジション法による酸化マグネシウム(MgO)薄膜作製 : 大気圧下、低温成長への挑戦
- ZnOの基本物性と光デバイス応用
- Mechanical and Dielectric Breakdown Properties of Biodegradable Plastics
- Surface Treatment of Indium-Tin-Oxide Substrates and Its Effects on Initial Nucleation Processes of Diamine Films
- 半導体低次元系における励起子物性とレーザへの応用
- 有機/無機材料界面の問題
- Three-Dimensional Jets Issuing from Cruciform Nozzles having four aspect rartio : 1st Report, Mean Flow Properties
- Management of a Stronger Wall Jet by an Embedded Streamwise Vortex : Reynolds Stresses Distributions and Evaluation of the Vorticity Transport Equation
- Effect of wall roughness on velocity distribution in channel flow : relation between the vortex pattern in roughness groove and flow pattern over the rough wall
- A Numerical Study on the Blood Flow in an Artery with a Rough surface (2nd Report, Pulsatile Flow) : Series B : Fluids Engineering, Heat Transfer, Combustion, Power, Thermophysical Properties
- Streamwise Vortical Structure Associated with the Bursting Phenomenon in the Bursting Phenomenon in the Turbulent Boundary Layer over a d-Type Rough Surface at a Low Reynolds Number : Series B : Fluid Engineering Heat Transfer Combustion, Power Thermophys
- The Coherent Structure of a Turbulent Boundary Layer Over a d-Type Rough Surface at a Low Reynolds Number : Analysis With the Four Quadrant Method
- II-VI族半導体ヘテロ構造の設計と作製
- On The Detection of the Bursting Events with the VITA Technique : Series B : Fluid Engineering, Heat Transfer, Combustion, Power, Thermophysical Properties
- The Coherent Structure of a Turbulent Boundary Layer over a d-Type Rough Surface : Analysis with the VITA Technique and the Four Quadrant Method : Series B : Fluid Engineering, Heat Transfer, Combustion, Power, Thermophysical Properties
- The coherent structure of a turbulent boundary layer over a d-type rough surface at a low Reynolds number : Analysis with the VITA technique and statistical characteristics : Series B : Fluid Engineering, Heat Transfer, Combustion, Power, Thermophysical P