RF-スパッタ法によって合成されたTi_<1-x>Al_xN薄膜の耐酸化性(<小特集>セラミック材料小特集)

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The effect of Al on the resistance against oxidation of Ti_<1-x>Al_xN films prepared by the rf-sputtering method was investigated. ESCA spectra of the samples exposed in air for one day at room temperature showed that Ti2p_<3/2> peak shifted to the higher binding energy side by adding AlN and oxidation of the surface of the Al-bearing films was reduced in comparison with TiN. The Oxidation of Ti_<1-x>Al_xN at high temperatures in O_2 gas flow was examined by Al_<0.35>N, Ti_<0.3>Al_<0.7>N (a new crystal phase) and the Wurtzite-type Ti_<0.15>Al<0.85>N were stable below 800℃ but oxidized at 900℃ in O_2 gas flow. Each oxidized sample was a mixture of TiO_2, Al_2TiO_5, Al_2O_3 and AlN. In N_2 atmosphere, the NaCl-type Ti_<0.65>Al_<0.35>N was stable below 800℃, but decomposed to two nitrides, TiN and AlN, at 1000℃. This phase separation is surely related to the oxidation of Ti_<0.65> Al_<0.35>N described above.
社団法人日本材料学会の論文
1988-01-15