反応性スパッタ法で作製したCu_3N-TiN系窒化物薄膜の電子状態

概要

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Nitride thin films in the Cu_3N-TiN system were prepared by a reactive sputtering method. Analyses of X-ray photoelectron spectra and X-ray absorption spectra for the films revealed the following. (1) The valence state of copper is nearly equal to unity in both Cu_3N and the anti-rhenium trioxide-type solid solutions in the Cu_3N-TiN system, and the charge transfer occurs from copper to nitrogen. (2) Copper has a peculiar electronic state in Cu_3N compared to metal atoms in other metal nitrides, i. e., 3d electrons of copper are quite localized. (3) With the addition of TiN, the contribution of 3d electrons of metal to the levels consisting of metal 3d electrons and nitrogen 2p electrons increases, and the bonding state seems to become band -like one. These electronic states are considered to play an important role on the thermal stability of anti-rhenium trioxide-type Cu_3N and nitride films in the Cu_3N-TiN system.
社団法人日本材料学会の論文
1991-08-15