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Process Development Division FUJITSU LIMITED | 論文
- Preparation of Platinum Palladium Monoxide Pt_Pd_xO Thin Films
- Nucleation of Microcrystallites in Phosphorus-Doped Si: H Films
- A New Technique of Boron Doping in Si:H Films
- Effect of Annealing on Hydrogenated Amorphous Silicon Prepared at High Deposition Rate
- Radical- and Ion-Induced Reactions on Plasma-Deposited Silicon Surfaces
- Growth Kinetics of Silicon Thin Film Studied by Hydrogen Radical and Ion Irradiation : Beam Induced Physics and Chemistry
- Diffusion Barrier Effect of Ultra-Thin Photo-Nitrided a-Si:H Overlayer on SnO_2/Glass Substrate
- Impurity Diffusion Barrier Effect of Ultra-Thin Plasma-Nitrided a-Si:H Overlayer on SnO_2/Glass Substrate
- Electronic Structure of Photochemically Etched Silicon Surfaces : Surfaces, Interfaces and Films
- Diffusion of constituent Atoms in P-type a-Si:H / SnO_2 Interfaces : Surfaces, Interfaces and Films
- Band Offset in Boron-Doped Amorphous Silicon Heterostructures : Electrical Properties of Condensed Matter
- Determination of Band Discontinuity in Amorphous Silicon Heterojunctions : Electrical Properties of Condensed Matter
- Electron Transport to a Substrate in an rf Capacitively Coupled Plasma by the Boltzmann Equation
- Memory Operation of Silicon Quantum-Dot Floating-GateMetal-Oxide-Semiconductor Field-Effect Transistors : Semiconductors
- Luminescence Study of Thermally-Oxidized Porous Si under Subgap or Overgap Excitation
- Gap-State Distributions in Hydrogenated Amorphous Silicon-Germanium Evaluated Using Capacitance-Voltage Method
- Nitrogen Incorporation in a-Ge:H Produced in High-Hydrogen-Dilution Plasma
- High Quality a-SiGe:H Alloys Prepared by Nanometer Deposition/H_2 Plasma Annealing Method
- Amorphous Silicon Static Induction Transistor
- High-Rate GaAs Epitaxial Lift-Off Technique for Optoelectronic Integrated Circuits
- Single-Chip Integration of Light-Emitting Diode, Waveguide and Micrormirrors
- Fabrication and Evaluation of Three-Dimensional Optically Coupled Common Memory
- Analytical Modelling of Quasi-Breakdown of Ultrathin Gate Oxides under Constant Current Stressing
- Quantitative Analysis of Tunneling Current through Ultrathin Gate Oxides
- Phonon Interaction in the Luminescence of Porous Silicon
- Reabsorption of Visible Luminescence in Porous Si
- Visible Photoluminescence from Porous Silicon
- Structural Inhomogeneity in Hydrogenated Amorphous Silicon in Relation to Photoelectric Properties and Defect Density
- Deposition of Hydrogenated Amorphous Silicon under Intermittent Substrate Bias
- In Situ Monitoring of Silicon Surfaces During Reactive Ion Etching
- Correlation between Light-Induced Degradation and Structural Inhomogeneities in Hydrogenated Amorphous Silicon Prepared under High-Rate Deposition Conditions
- Calculation of Subband States in a Metal-Oxide-Semiconductor Inversion Layer with a Realistic Potential Profile
- Analytical Modeling of Metal Oxide Semiconductor Inversion-Layer Capacitance
- Quasibound States of Electric Field-Induced Quantum Wells in Silicon Subsurface
- Quantitative Evaluation of Dopant Loss in 5-10 keV As Ion Implantation for Low-Resistive, Ultrashallow Source/Drain Formation
- Charging States of Si Quantum Dots as Detected by AFM/Kelvin Probe Technique
- Band-Gap Energy Dependence of Emission Spectra in Rare Earth-Doped Zn_Cd_xS Thin Film Electroluminescent Devices
- Several Blue-Emitting Thin-Film Electroluminescent Devices
- Eleetroluminescence of ZnF_2 Thin-Films Doped with Rare-Earth Ions
- Strong Ultraviolet-Emitting ZnF_2:Gd Thin Film Electroluminescent Device
- Evaluation of Hafnium-Titanium-Oxide Thin Films Prepared by Reactive Sputtering
- Atomic Composition and Structural Properties of Blue Emitting BaAl_2S_4:Eu Electroluminescent Thin Films
- Blue-Emitting BaAl_2S_4:Eu Thin-Film Electroiluminescent Devices Prepared by Two Targets pulse Electron Beam Evaporation(Special Issue on Electronic Displays)
- High-Luminance Blue-Emitting BaAl_2S_4:Eu Thin-Film Electroluminescent Devices
- Transient Behavior in ZnS:TbF_x Thin-Film Electroluminescent Devices Excited by Very Short Pulse
- Thickness-Shear Vibration Mode Characteristics of SrBi_4Ti_4O_-Based Ceramics
- Piezoelectric Properties of SrBi_4Ti_4O_-Based Ceramics
- Effect of Low-Molecula-Weight Novolak Resin on Microgrooves : Resist and Processes
- Effect of Low-Molecular-Weight Novolak Resin on Microgrooves
- Mechanism of High Selectivity and Impurity Effects in HBr RIE: In-Situ Surface Analysis
- Early Stage of Silicon Oxidation Studied by in situ X-Ray Photoelectron Spectroscopy : Materials and Device Structures with Atomic Scale Resolution(Solid State Devices and Materials 1)
- Reduction of Electron Shading Damage Using Synchronous Bias in Pulsed Plasma
- Very High Selective N^+ poly-Si RIE with Carbon Elimination : Etching and Deposition Technology
- Internal Photoemission in a-Si:H Schottky-Barrier and MOS Structures : III-2: AMORPHOUS SOLAR CELLS : Characterization
- Current Transport Mechanism of Hydrogenated Amorphous Silicon Schottky Barrier Diodes