AlGaN/GaN Metal--Oxide--Semiconductor High-Electron-Mobility Transistors with a High Breakdown Voltage of 1400 V and a Complementary Metal--Oxide--Semiconductor Compatible Gold-Free Process
スポンサーリンク
概要
- 論文の詳細を見る
This paper reports the fabrication and characterization of AlGaN/GaN-on-sapphire metal--oxide--semiconductor high-electron-mobility transistors (MOS-HEMTs) using a complementary metal--oxide--semiconductor (CMOS) compatible gold-free process. Devices with a gate-to-drain spacing L_{\text{GD}} of 20 μm achieved an off-state breakdown voltage V_{\text{BR}} of 1400 V and an on-state resistance R_{\text{on}} of 22 m\Omega\cdotcm<sup>2</sup>. This is the highest V_{\text{BR}} achieved so far for gold-free AlGaN/GaN MOS-HEMTs. In addition, high on/off current ratio I_{\text{on}}/I_{\text{off}} of {\sim}10^{9} and low gate leakage current I_{\text{G}} of {\sim}10^{-11} A/mm were also obtained.
- 2013-04-25
著者
-
Chen Kevin
Department Of Electrical And Electronic Engineering Hong Kong University Of Science And Technology
-
Chan Kwok
Department Of Biology The Hong Kong University Of Science And Technology
-
Yeo Yee-chia
Department Of Electrical And Computer Engineering National University Of Singapore
-
CHI Dong
Institute of Materials Research and Engineering
-
Tan Leng
Department Of Electrical And Computer Engineering National University Of Singapore
-
Liu Wei
Luminous! Centre Of Excellence For Semiconductor Lighting And Displays Nanyang Technological University
-
Zhan Chunlei
Department Of Electrical And Computer Engineering National University Of Singapore
-
Liu Xinke
Department Of Electrical And Computer Engineering National University Of Singapore
-
OWEN Man
Department of Electrical and Computer Engineering, National University of Singapore
-
Owen Man
Department of Electrical and Computer Engineering, National University of Singapore, Singapore 117576
-
Chi Dong
Institute of Materials Research and Engineering, Agency for Science Technology and Research, Singapore 117602
-
Tan Leng
Department of Electrical and Computer Engineering, National University of Singapore, Singapore 117576
-
Chan Kwok
Department of Electronic and Computer Engineering, Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong
-
Liu Wei
Luminous! Centre of Excellence for Semiconductor Lighting and Displays, Nanyang Technological University, Singapore 639785
関連論文
- Cytotoxicity of Triamcinolone on Cultured Human Retinal Pigment Epithelial Cells : Comparison with Dexamethasone and Hydrocortisone
- Invited Channel Engineering of 3-Nitride HEMTs for Enhanced Device Performance (先端デバイスの基礎と応用に関するアジアワークショップ(AWAD2005))
- Invited Channel Engineering of 3-Nitride HEMTs for Enhanced Device Performance (先端デバイスの基礎と応用に関するアジアワークショップ(AWAD2005))
- Device Isolation by Plasma Treatment for Planar Integration of E/D-mode AlGaN/GaN HEMTs
- GaN-based Direct-coupled FET Logic (DCFL) Digital Circuits Operating at 375℃
- Enhancement-Mode AlGaN/GaN HEMTs with Low On-Resistance and Low Knee-Voltage(GaN-Based Devices,Heterostructure Microelectronics with TWHM2005)
- Gain Improvement of Enhancement-mode AlGaN/GaN HEMTs Using Dual-Gate Architectures
- Theoretical Investigation of Electrical Performance and Band Structure of P-MOSFETs with Si_Ge_x Source/Drain Stressors
- Sub-30nm P-channel Schottky Source/Drain FinFETs : Integration of Pt_3Si FUSI Metal Gate and High-κ Dielectric
- 0.5μm Silicon-on Sapphire Metal Oxide Semiconductor Field Effect Transistor for RF Power Amplifier Applications
- Strained-Silicon Transistors with Silicon-Carbon Source/Drain
- Stress-induced phenocopy of C. elegans defines functional steps of sensory organ differentiation
- High-Gain and High-Bandwidth AlGaN/GaN High Electron Mobility Transistor Comparator with High-Temperature Operation
- Source/Drain Engineering for In0.7Ga0.3As N-Channel Metal--Oxide--Semiconductor Field-Effect Transistors: Raised Source/Drain with In situ Doping for Series Resistance Reduction
- Source Engineering for Tunnel Field-Effect Transistor: Elevated Source with Vertical Silicon--Germanium/Germanium Heterostructure
- Optimal Environmental Performance of Water-cooled Chiller System with All Variable Speed Configurations
- Ge/Ni-InGaAs Solid-State Reaction for Contact Resistance Reduction on n In.Ga.As (Special Issue : Solid State Devices and Materials (1))
- Schottky Source/Drain InAlN/GaN Metal-Insulator-Semiconductor High-Electron-Mobility Transistor with High Breakdown Voltage and Low On-Resistance (Special Issue : Solid State Devices and Materials (2))
- Anomalous Josephson Current through a Ferromagnet-Semiconductor Hybrid Structure
- High-Electron-Mobility InN Layers Grown by Boundary-Temperature-Controlled Epitaxy
- Rashba Spin Orbital Coupling Effect on the Conductance of Two-Dimensional Electron Gas/Insulator/Noncentrosymmetric Superconductor Junction
- AlGaN/GaN-on-Silicon Metal-Oxide-Semiconductor High-Electron-Mobility Transistor with Breakdown Voltage of 800V and On-State Resistance of 3mΩ・cm^2 Using a Complementary Metal-Oxide-Semiconductor Compatible Gold-Free Process
- Device Physics and Design of a L-Shaped Germanium Source Tunneling Transistor
- Effects of structural and electronic characteristics of chalcones on the activation of peroxisome proliferator-activated receptor gamma (PPARγ)
- Device Isolation by Plasma Treatment for Planar Integration of Enhancement/Depletion-Mode AlGaN/GaN High Electron Mobility Transistors
- Switching Model of TaO
- AlGaN/GaN Metal--Oxide--Semiconductor High-Electron-Mobility Transistors with a High Breakdown Voltage of 1400 V and a Complementary Metal--Oxide--Semiconductor Compatible Gold-Free Process
- Enhancement-Mode LaLuO
- Integrated Over-Temperature Protection Circuit for GaN Smart Power ICs
- N-Channel InGaAs Field-Effect Transistors formed on Germanium-on-Insulator Substrates
- Switching Model of TaOx-Based Nonpolar Resistive Random Access Memory (Special Issue : Solid State Devices and Materials)
- Device Technology for GaN Mixed-Signal Integrated Circuits
- Gain Improvement of Enhancement-Mode AlGaN/GaN High-Electron-Mobility Transistors Using Dual-Gate Architecture