Strained-Silicon Transistors with Silicon-Carbon Source/Drain
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概要
- 論文の詳細を見る
- 2006-09-13
著者
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Yeo Yee-chia
Department Of Electrical And Computer Engineering National University Of Singapore (nus)
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Yeo Yee-chia
Department Of Electrical And Computer Engineering National University Of Singapore
関連論文
- Theoretical Investigation of Electrical Performance and Band Structure of P-MOSFETs with Si_Ge_x Source/Drain Stressors
- Strained-Silicon Transistors with Silicon-Carbon Source/Drain
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- Source Engineering for Tunnel Field-Effect Transistor: Elevated Source with Vertical Silicon--Germanium/Germanium Heterostructure
- Ge/Ni-InGaAs Solid-State Reaction for Contact Resistance Reduction on n In.Ga.As (Special Issue : Solid State Devices and Materials (1))
- AlGaN/GaN-on-Silicon Metal-Oxide-Semiconductor High-Electron-Mobility Transistor with Breakdown Voltage of 800V and On-State Resistance of 3mΩ・cm^2 Using a Complementary Metal-Oxide-Semiconductor Compatible Gold-Free Process
- Device Physics and Design of a L-Shaped Germanium Source Tunneling Transistor
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- N-Channel InGaAs Field-Effect Transistors formed on Germanium-on-Insulator Substrates
- Switching Model of TaOx-Based Nonpolar Resistive Random Access Memory (Special Issue : Solid State Devices and Materials)