Source/Drain Engineering for In0.7Ga0.3As N-Channel Metal--Oxide--Semiconductor Field-Effect Transistors: Raised Source/Drain with In situ Doping for Series Resistance Reduction
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概要
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In this paper, we report N-channel metal--oxide--semiconductor field-effect transistors (N-MOSFETs) featuring in situ doped raised In0.53Ga0.47As source/drain (S/D) regions. This is the first demonstration of such regrowth on an In0.7Ga0.3As channel. After SiON spacer formation, the raised In0.53Ga0.47As S/D structure was formed by selective epitaxy of In0.53Ga0.47As in the S/D regions by metal-organic chemical-vapor deposition (MOCVD). In situ silane SiH4 doping was also introduced to boost the N-type doping concentration in the S/D regions for series resistance $R_{\text{SD}}$ reduction. The raised S/D structure contributes to $I_{\text{Dsat}}$ enhancement for the In0.7Ga0.3As N-MOSFETs.
- 2011-04-25
著者
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Yeo Yee-chia
Department Of Electrical And Computer Engineering National University Of Singapore
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Zhu Zhu
Department of Pharmacy, Peking Union Medical College Hospital, Chinese Academy of Medical Sciences-P
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Yeo Yee-Chia
Department of Electrical and Computer Engineering, National University of Singapore, Singapore 117576
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Koh Shao-Ming
Department of Electrical and Computer Engineering, National University of Singapore, Singapore 117576
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Chin Hock-Chun
Department of Electrical and Computer Engineering, National University of Singapore, Singapore 117576
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Gong Xiao
Department of Electrical and Computer Engineering, National University of Singapore, 117576 Singapore
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Wang Lanxiang
Department of Electrical and Computer Engineering, National University of Singapore, Singapore 117576
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Wang Benzhong
Institute of Materials Research and Engineering, Agency for Science Technology and Research, Singapore 117602
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Chia Ching
Institute of Materials Research and Engineering, Agency for Science Technology and Research, Singapore 117602
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