Ge/Ni-InGaAs Solid-State Reaction for Contact Resistance Reduction on n In.Ga.As (Special Issue : Solid State Devices and Materials (1))
スポンサーリンク
概要
著者
-
Guo Hua
Department Of Cardiology Clinical School Of Medical College Nanjing University
-
Yeo Yee-chia
Department Of Electrical And Computer Engineering National University Of Singapore
-
Kong Eugene
Department of Electrical and Computer Engineering, National University of Singapore, 117576 Singapore
-
Zhang Xingui
Department of Electrical and Computer Engineering, National University of Singapore, 117576 Singapore
関連論文
- Segmental Heterogeneity of Epithelial Ion Transport Induced by Stimulants in Rat Distal Colon(Molecular and Cell Biology)
- Comparison of Myocardial Bridging by Dual-Source CT With Conventional Coronary Angiography
- Theoretical Investigation of Electrical Performance and Band Structure of P-MOSFETs with Si_Ge_x Source/Drain Stressors
- Strained-Silicon Transistors with Silicon-Carbon Source/Drain
- Source/Drain Engineering for In0.7Ga0.3As N-Channel Metal--Oxide--Semiconductor Field-Effect Transistors: Raised Source/Drain with In situ Doping for Series Resistance Reduction
- Source Engineering for Tunnel Field-Effect Transistor: Elevated Source with Vertical Silicon--Germanium/Germanium Heterostructure
- Localized persistent interstitial pulmonary emphysema presenting as a spontaneous tension pneumothorax in a full term infant
- Ge/Ni-InGaAs Solid-State Reaction for Contact Resistance Reduction on n In.Ga.As (Special Issue : Solid State Devices and Materials (1))
- AlGaN/GaN-on-Silicon Metal-Oxide-Semiconductor High-Electron-Mobility Transistor with Breakdown Voltage of 800V and On-State Resistance of 3mΩ・cm^2 Using a Complementary Metal-Oxide-Semiconductor Compatible Gold-Free Process
- Device Physics and Design of a L-Shaped Germanium Source Tunneling Transistor
- Switching Model of TaO
- AlGaN/GaN Metal--Oxide--Semiconductor High-Electron-Mobility Transistors with a High Breakdown Voltage of 1400 V and a Complementary Metal--Oxide--Semiconductor Compatible Gold-Free Process
- N-Channel InGaAs Field-Effect Transistors formed on Germanium-on-Insulator Substrates
- Switching Model of TaOx-Based Nonpolar Resistive Random Access Memory (Special Issue : Solid State Devices and Materials)