N-Channel InGaAs Field-Effect Transistors formed on Germanium-on-Insulator Substrates
スポンサーリンク
概要
- 論文の詳細を見る
- 2012-11-25
著者
-
Yoon Soon
School Of Electrical And Electronic Engineering Nanyang Technological University
-
Yeo Yee-chia
Department Of Electrical And Computer Engineering National University Of Singapore
-
TAN Kian
School of Electrical and Electronic Engineering, Nanyang Technological University (NTU)
-
SUBRAMANIAN Sujith
Department of Electrical and Computer Engineering, National University of Singapore
-
OWEN Man
Department of Electrical and Computer Engineering, National University of Singapore
-
LOKE Wan
School of Electrical and Electronic Engineering, Nanyang Technological University (NTU)
-
WICAKSONO Satrio
School of Electrical and Electronic Engineering, Nanyang Technological University (NTU)
関連論文
- Molecular Beam Epitaxial Growth of InP Using a Valved Phosphorus Cracker Cell : Optimization of Electrical, Optical and Surface Morphology Characteristics
- Theoretical Investigation of Electrical Performance and Band Structure of P-MOSFETs with Si_Ge_x Source/Drain Stressors
- Strained-Silicon Transistors with Silicon-Carbon Source/Drain
- Source/Drain Engineering for In0.7Ga0.3As N-Channel Metal--Oxide--Semiconductor Field-Effect Transistors: Raised Source/Drain with In situ Doping for Series Resistance Reduction
- Source Engineering for Tunnel Field-Effect Transistor: Elevated Source with Vertical Silicon--Germanium/Germanium Heterostructure
- Influence of $k\cdot p$ Formalisms on the Band Structure of InxGa1-xAs1-yNy/GaAs Quantum Well: A Comparison of 8-Band and 10-Band Models
- Doping Effects on P-type InGaAs/AlGaAs Quantum Well Structures for Infrared Photodetectors Grown by Molecular Beam Epitaxy
- Effects of V/III Ratio on the Properties of In_Ga_xP/GaAs Grown by a Valved Phosphorus Cracker Cell in Solid Source Molecular Beam Epitaxy
- Two-Dimensional Electron Gas Mobility Enhancement in Inverted GaAs/n-AlGaAs Heterostructures Grown by Molecular Beam Epitaxy
- Ge/Ni-InGaAs Solid-State Reaction for Contact Resistance Reduction on n In.Ga.As (Special Issue : Solid State Devices and Materials (1))
- AlGaN/GaN-on-Silicon Metal-Oxide-Semiconductor High-Electron-Mobility Transistor with Breakdown Voltage of 800V and On-State Resistance of 3mΩ・cm^2 Using a Complementary Metal-Oxide-Semiconductor Compatible Gold-Free Process
- Device Physics and Design of a L-Shaped Germanium Source Tunneling Transistor
- Switching Model of TaO
- AlGaN/GaN Metal--Oxide--Semiconductor High-Electron-Mobility Transistors with a High Breakdown Voltage of 1400 V and a Complementary Metal--Oxide--Semiconductor Compatible Gold-Free Process
- N-Channel InGaAs Field-Effect Transistors formed on Germanium-on-Insulator Substrates
- Switching Model of TaOx-Based Nonpolar Resistive Random Access Memory (Special Issue : Solid State Devices and Materials)