Influence of $k\cdot p$ Formalisms on the Band Structure of InxGa1-xAs1-yNy/GaAs Quantum Well: A Comparison of 8-Band and 10-Band Models

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概要

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• The influence of two $k\cdot p$ formalisms, namely, the realistic 8-band and 10-band models, on the conduction and valence band structures of a 7 nm InxGa1-xAs1-yNy/GaAs quantum well (QW) has been investigated. It is discovered that at high indium composition (35%), the energy dispersion curves calculated by the 8-band model, using electron effective mass ($m_{\text{e}}^{*}$) predicted by band-anticrossing (BAC) model, agrees very well with the results of 10-band model near the Brillouin zone center. However, at lower indium composition (15%), larger deviation of excited state energy level, such as $e2$, is found. In contrast to the previous reports that assume great enhancement of $m_{\text{e}}^{*}$ even at indium of 30–40%, $m_{\text{e}}^{*}$ extrapolated from the BAC model predicted a more modest enhancement that is weakened as the indium composition in the well layer is being increased.

• Japan Society of Applied Physicsの論文
• 2005-05-10

著者

• Fan Wei

  School Of Electrical And Electronic Engineering Nanyang Technological University

• YOON Soon

  School of Electrical and Electronic Engineering, Nanyang Technological University

• Yoon Soon

  School Of Electrical And Electronic Engineering Nanyang Technological University

• Ng Say

  School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore 639798

• Dang Yu

  School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore 639798

• Ng Say

  School Of Electrical And Electronic Engineering Nanyang Technological University

• Dang Yu

  School Of Electrical And Electronic Engineering Nanyang Technological University

関連論文

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• Influence of $k\cdot p$ Formalisms on the Band Structure of InxGa1-xAs1-yNy/GaAs Quantum Well: A Comparison of 8-Band and 10-Band Models
• Doping Effects on P-type InGaAs/AlGaAs Quantum Well Structures for Infrared Photodetectors Grown by Molecular Beam Epitaxy
• Effects of V/III Ratio on the Properties of In_Ga_xP/GaAs Grown by a Valved Phosphorus Cracker Cell in Solid Source Molecular Beam Epitaxy
• Two-Dimensional Electron Gas Mobility Enhancement in Inverted GaAs/n-AlGaAs Heterostructures Grown by Molecular Beam Epitaxy
• N-Channel InGaAs Field-Effect Transistors formed on Germanium-on-Insulator Substrates

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