Effects of V/III Ratio on the Properties of In_<1-x>Ga_xP/GaAs Grown by a Valved Phosphorus Cracker Cell in Solid Source Molecular Beam Epitaxy

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概要

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• We report the molecular beam epitaxial (MBE) growth of high-quality In_<1-x>Ga_xP epilayers grown on a GaAs (001) substrate using a valved phosphorus cracker cell at a wide range of V/III flux ratios. Film characterization was carried out using X-ray diffraction (XRD), Raman scattering and low-temperature photoluminescence (PL). A typical Raman spectrum showed features characteristic of atomic disorder in the material with the appearance of GaP-like and InP-like longitudinal-optic (LO) modes and the transverse-optic (TO) mode. The PL peak energy increased from 1.941 eV to 1.961 eV while the PL full-width at half maximum (FWHM) decreased from 〜11.3 meV to 〜6.3 meV as the V/III ratio was increased from 5 to 50. This suggests an increase in the atomic disorder (more random) and improvement in the optical quality. The Stokes shift, estimated from the energy difference between the band-gap calculated using XRD composition and PL peak energy, suggests an increase in microclustering following a decrease in the V/III ratio.

• 社団法人応用物理学会の論文
• 1999-10-15

著者

• YOON Soon

  School of Electrical and Electronic Engineering, Nanyang Technological University

• ZHENG Hai

  School of Electrical and Electronic Engineering, Nanyang Technological University

• MAH Kia

  School of Electrical and Electronic Engineering, Nanyang Technological University

• Yoon Soon

  School Of Electrical And Electronic Engineering Nanyang Technological University

• Mah Kia

  School Of Electrical And Electronic Engineering Nanyang Technological University

• Zheng Hai

  School Of Electrical And Electronic Engineering Nanyang Technological University

関連論文

• Molecular Beam Epitaxial Growth of InP Using a Valved Phosphorus Cracker Cell : Optimization of Electrical, Optical and Surface Morphology Characteristics
• Influence of $k\cdot p$ Formalisms on the Band Structure of InxGa1-xAs1-yNy/GaAs Quantum Well: A Comparison of 8-Band and 10-Band Models
• Doping Effects on P-type InGaAs/AlGaAs Quantum Well Structures for Infrared Photodetectors Grown by Molecular Beam Epitaxy
• Effects of V/III Ratio on the Properties of In_Ga_xP/GaAs Grown by a Valved Phosphorus Cracker Cell in Solid Source Molecular Beam Epitaxy
• Two-Dimensional Electron Gas Mobility Enhancement in Inverted GaAs/n-AlGaAs Heterostructures Grown by Molecular Beam Epitaxy
• N-Channel InGaAs Field-Effect Transistors formed on Germanium-on-Insulator Substrates

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