Two-Dimensional Electron Gas Mobility Enhancement in Inverted GaAs/n-AlGaAs Heterostructures Grown by Molecular Beam Epitaxy

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概要

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• Electrical properties of an inverted heterojunction interface in GaAs/n-AlGaAs heterostructures selectively doped with Si were investigated. It was found that the effect of mobility reduction normally observed in such structures can be overcome by suppressing Si doping in the AlGaAs layer and increasing the spacer layer thickness. The results indicate a strong contribution, based on a diffused profile of doped Si impurities in the GaAs channel and AlGaAs spacer, resulting from surface segregation. Large enhancement of two-dimensional electron gas (2DEG) mobility at low temperature was achieved in an inverted heterostructure at a low Si doping concentration (N_d=3×10^<17> cm^<-3>) and spacer thickness exceeding 100 Å. The highest mobility value obtained was 5×10^4 cm^2/V・s at 77 K, with an interface carrier density N_s of arond 1.7×10^<11> cm^<-2>.

• 社団法人応用物理学会の論文
• 1992-07-15

著者

• Yoon Soon

  School Of Electrical And Electronic Engineering Nanyang Technological University

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• Effects of V/III Ratio on the Properties of In_Ga_xP/GaAs Grown by a Valved Phosphorus Cracker Cell in Solid Source Molecular Beam Epitaxy
• Two-Dimensional Electron Gas Mobility Enhancement in Inverted GaAs/n-AlGaAs Heterostructures Grown by Molecular Beam Epitaxy
• N-Channel InGaAs Field-Effect Transistors formed on Germanium-on-Insulator Substrates

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