Doping Effects on P-type InGaAs/AlGaAs Quantum Well Structures for Infrared Photodetectors Grown by Molecular Beam Epitaxy

スポンサーリンク

概要

• 論文の詳細を見る

• We report the effects of Be concentration incorporated into the well material on the p-type InGaAs/AlGaAs multiple quantum well structures. The increased Be doping is found to cause red shift of the dopant-related and excitonic luminescence in the wells of the structures, increase well width, deteriorate the interface quality and increase lattice mismatch. Those factors affect the positioning of the heavy and light holes in the valence band well, and thus the absorption wavelength resulted from the intersubband transition. These observations are useful for the design of p-type quantum well infrared photodetectors.

• 社団法人応用物理学会の論文
• 1999-04-01

著者

• YOON Soon

  School of Electrical and Electronic Engineering, Nanyang Technological University

• ZHANG Peng

  School of Electrical and Electronic Engineering, Nanyang Technological University

• Yoon Soon

  School Of Electrical And Electronic Engineering Nanyang Technological University

• Zhang P

  School Of Electrical And Electronic Engineering Nanyang Technological University

• Zhang Peng

  School Of Electrical And Electronic Engineering Nanyang Technological University

• Shi Wei

  School Of Electrical And Electronic Engineering Nanyang Technological University

• Zhang Dao

  School Of Electrical And Electronic Engineering Nanyang Technological University

• Shi Wei

  School Of Chemical Engineering And Technology Tianjin University

• ZHANG Peng

  School of Civil Engineering and Mechanics, Huazhong University of Science and Technology

関連論文

• Molecular Beam Epitaxial Growth of InP Using a Valved Phosphorus Cracker Cell : Optimization of Electrical, Optical and Surface Morphology Characteristics
• Laminin, VEGF, and Bone Matrix Protein Expression in Uroepithelial Bone Induction-a Canine Model
• Responses of litter decomposition to temperature along a chronosequence of tropical montane rainforest in a microcosm experiment
• Influence of $k\cdot p$ Formalisms on the Band Structure of InxGa1-xAs1-yNy/GaAs Quantum Well: A Comparison of 8-Band and 10-Band Models
• Investigation of Persistent Photoconductivity from Compensated Amorphous Hydrogenated Silicon
• Validated liquid chromatography-tandem mass spectrometry method for quantitative determination of dauricine in human plasma and its application to pharmacokinetic study
• Doping Effects on P-type InGaAs/AlGaAs Quantum Well Structures for Infrared Photodetectors Grown by Molecular Beam Epitaxy
• Effects of V/III Ratio on the Properties of In_Ga_xP/GaAs Grown by a Valved Phosphorus Cracker Cell in Solid Source Molecular Beam Epitaxy
• Determination of mitoxantrone in rat plasma by liquid chromatography-tandem mass spectrometry method : Application to a pharmacokinetic study
• Adsorption of bilirubin with polylysine carrying chitosan-coated nylon affinity membranes
• Two-Dimensional Electron Gas Mobility Enhancement in Inverted GaAs/n-AlGaAs Heterostructures Grown by Molecular Beam Epitaxy
• Analysis of the Welding Deformation of Resistance Spot Welding for Sheet Metal with Unequal Thickness
• N-Channel InGaAs Field-Effect Transistors formed on Germanium-on-Insulator Substrates

もっと見る 閉じる

スポンサーリンク