Investigation of Persistent Photoconductivity from Compensated Amorphous Hydrogenated Silicon

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概要

• 論文の詳細を見る

• The decay of persistent photoconductivity from compensated amorphous hydrogenated silicon obeys a power law time dependence in the first five hours and an exponential dependence thereafter. Photoconductivity and persistent photoconductivity both increase with illumination time and follow a power law dependence on light intensity, σαF^γ, although the values of γ are different. Interesting phenomena were observed from prolonged exposure of 200 mW cm^<-2>. All the results mentioned above can be qualitatively explained by our model previously proposed for nipi・・・ multilayers, which involves P-B deep-trap and P-B-H shallow-trap complexes. It is also predicted that the new states introduced by compensation are possibly associated with complexes involving phosphorus, boron and hydrogen.

• 社団法人応用物理学会の論文
• 1993-02-15

著者

• Zhang D

  Nanyang Technological Univ. Singapore

• ZHANG Dao

  School of Electrical and Electronic Engineering, Nanyang Technological University

• Zhang Dao

  School Of Electrical And Electronic Engineering Nanyang Technological University

関連論文

• Investigation of Persistent Photoconductivity from Compensated Amorphous Hydrogenated Silicon
• Doping Effects on P-type InGaAs/AlGaAs Quantum Well Structures for Infrared Photodetectors Grown by Molecular Beam Epitaxy

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