AlGaN/GaN-on-Silicon Metal-Oxide-Semiconductor High-Electron-Mobility Transistor with Breakdown Voltage of 800V and On-State Resistance of 3mΩ・cm^2 Using a Complementary Metal-Oxide-Semiconductor Compatible Gold-Free Process

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概要

• 論文の詳細を見る
• 2012-06-25

著者

• Chen Kevin

  Department Of Electrical And Electronic Engineering Hong Kong University Of Science And Technology

• Chan Kwok

  Department Of Biology The Hong Kong University Of Science And Technology

• Yeo Yee-chia

  Department Of Electrical And Computer Engineering National University Of Singapore

• Tan Leng

  Department Of Electrical And Computer Engineering National University Of Singapore

• Chan Kwok

  Department Of Electronic And Computer Engineering Hong Kong University Of Science And Technology

• Liu Wei

  Luminous! Centre Of Excellence For Semiconductor Lighting And Displays Nanyang Technological University

• LIU Xinke

  Department of Electrical and Computer Engineering, National University of Singapore

• ZHAN Chunlei

  Department of Electrical and Computer Engineering, National University of Singapore

• Zhan Chunlei

  Department Of Electrical And Computer Engineering National University Of Singapore

• Liu Xinke

  Department Of Electrical And Computer Engineering National University Of Singapore

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