Invited Channel Engineering of 3-Nitride HEMTs for Enhanced Device Performance (先端デバイスの基礎と応用に関するアジアワークショップ(AWAD2005))

概要

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We report several approaches to improving III-nitride HEMT performances through channel engineering. Based on an Al_<0.3>Ga_<0.7>N/Al_<0.05>Ga_<0.95>N/GaN, nearly flat transconductance and gain can be obtained at both the low and high drain current levels, a desirable feature for linear power amplifier operation required by advanced wireless system. For devices grown on sapphire substrate, a maximum power density of 3.38W/mm, a PAE of 45% are obtained at 2GHz. The output third-order intercept point (OIP3) is 33.2dBm at 2GHz. We also demonstrate an AlGaN/GaN/InGaN/GaN HEMT structure that features a 3-nm thin In_xGa_<1-x>N (x=0.1) layer inserted into the conventional AlGaN/GaN HEMT structure. Assisted by the InGaN layer's polarization field that is opposite to that in the AlGaN layer, an additional potential barrier is introduced between the 2DEG channel and buffer, leading to enhanced carrier confinement and improved buffer isolation. Using a conventional GaN buffer grown on sapphire substrate, the off-state source-drain leakage current is as low as 〜5μA/mm at V_<DS>=10V.
社団法人電子情報通信学会の論文
2005-06-22