Doping Concentration and Structural Dependences of the Thermal Stability of the 2DEG in GaN-Based High-Electron-Mobility Transistor Structures
スポンサーリンク
概要
- 論文の詳細を見る
- Japan Society of Applied Physicsの論文
- 2005-02-10
著者
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Zhou Yugang
Department of Electrical and Electronic Engineering, Hong Kong University of Science and Technology
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Zhou Yugang
Department Of Electrical And Electronic Engineering Hong Kong University Of Science And Technology
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Zhou Yugang
Department Of Electrical And Electronic Engineering The Hong Kong University Of Science And Technolo
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FENG Zhihong
Department of Electrical and Electronic Engineering, The Hong Kong University of Science and Technol
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CAI Shujun
Department of Electrical and Electronic Engineering, The Hong Kong University of Science and Technol
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LAU Kei-May
Department of Electrical and Electronic Engineering, The Hong Kong University of Science and Technol
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Lau Kei-may
Department Of Electrical And Electronic Engineering The Hong Kong University Of Science And Technolo
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Cai Shujun
Department Of Electrical And Electronic Engineering The Hong Kong University Of Science And Technolo
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Feng Zhihong
Department Of Electrical And Electronic Engineering The Hong Kong University Of Science And Technolo
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- GaN-based Direct-coupled FET Logic (DCFL) Digital Circuits Operating at 375℃
- Enhancement-Mode AlGaN/GaN HEMTs with Low On-Resistance and Low Knee-Voltage(GaN-Based Devices,Heterostructure Microelectronics with TWHM2005)
- Doping Concentration and Structural Dependences of the Thermal Stability of the 2DEG in GaN-Based High-Electron-Mobility Transistor Structures