Enhancement-Mode AlGaN/GaN HEMTs with Low On-Resistance and Low Knee-Voltage(GaN-Based Devices,<Special Section>Heterostructure Microelectronics with TWHM2005)
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概要
- 論文の詳細を見る
Based on fluoride-based plasma treatment of the gate region in AlGaN/GaN HEMTs and post-gate rapid thermal annealing (RTA), enhancement mode (E-mode) AlGaN/GaN HEMTs with low on-resistance and low knee-voltage were fabricated. The fabricated E-mode AlGaN/GaN HEMT with 1μm-long gate exhibits a threshold voltage of 0.9V, a knee-voltage of 2.2V, a maximum drain current density of 310mA/mm, a peak g_m of 148mS/mm, a current gain cutoff frequency f_T of 10.1GHz and a maximum oscillation frequency f_<max> of 34.3GHz. In addition, the fluoride-based plasma treatment was also found to be effective in lowering the gate leakage current, in both forward and reverse bias. Two orders of magnitude reducation in gate leakage current was observed in the fabricated E-mode HEMTs compared to the conventional D-mode HEMTs without fluoride-based plasma treatment.
- 社団法人電子情報通信学会の論文
- 2006-07-01
著者
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Chen Kevin
Department Of Electronic And Computer Engineering Hong Kong University Of Science And Technology
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Lau Kei
Department Of Electronic And Computer Engineering Hong Kong University Of Science And Technology
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Zhou Yugang
Department of Electrical and Electronic Engineering, Hong Kong University of Science and Technology
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Zhou Yugang
Department Of Electrical And Electronic Engineering Hong Kong University Of Science And Technology
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CAI Yong
Department of Electrical and Electronic Engineering, Hong Kong University of Science and Technology
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Chen Kevin
Department Of Electrical And Electronic Engineering Hong Kong University Of Science And Technology
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Lau Kei
Department Of Electrical And Electronic Engineering Hong Kong University Of Science And Technology
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Cai Yong
Department Of Electrical And Electronic Engineering Hong Kong University Of Science And Technology
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Yang Zhenchuan
Department Of Electrical And Electronic Engineering Hong Kong University Of Science And Technology
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