Inverted-Type InGaAs Metal-Oxide-Semiconductor High-Electron-Mobility Transistor on Si Substrate with Maximum Drain Current Exceeding 2A/mm
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概要
- 論文の詳細を見る
- 2012-10-25
著者
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Lau Kei
Department Of Electrical And Electronic Engineering Hong Kong University Of Science And Technology
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Tang Chak
Department Of Electrical And Electronic Engineering Hong Kong University Of Science And Technology
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Li Qiang
Department Of Chemistry East China Normal University
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LI Qiang
Department of Electronic and Computer Engineering, Hong Kong University of Science and Technology
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ZHOU Xiuju
Department of Electronic and Computer Engineering, Hong Kong University of Science and Technology
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Lau Kei
Department of Electronic and Computer Engineering, Hong Kong University of Science and Technology
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