Device Isolation by Plasma Treatment for Planar Integration of Enhancement/Depletion-Mode AlGaN/GaN High Electron Mobility Transistors
スポンサーリンク
概要
- 論文の詳細を見る
We demonstrate a new planar fabrication technology for integrating enhancement/depletion (E/D) mode AlGaN/GaN high electron mobility transistors (HEMTs) using fluoride plasma treatment techniques. The CF4 plasma treatment is used in two separate steps to achieve two objectives: 1) active device isolation; and 2) threshold voltage control for the E-mode HEMT formation. Compared with the devices formed by standard mesa etching, the HEMTs by planar process have comparable DC characteristics, with no obvious difference in device isolation. By using the planar process, the E/D-mode HEMTs are integrated on the same chip, and a direct-coupled FET logic inverter and a 17-stage ring oscillator are fabricated. When the supply voltage is 4.5 V, the ring oscillator yields a frequency of 146 MHz, corresponding to a propagation delay of 201 ps/stage.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2007-04-30
著者
-
Chen Kevin
Department Of Electrical And Electronic Engineering Hong Kong University Of Science And Technology
-
Lau Kei
Department Of Electrical And Electronic Engineering Hong Kong University Of Science And Technology
-
Tang Wilson
Department Of Civil Engineering Hong Kong University Of Science And Technology
-
Cai Yong
Department Of Electrical And Electronic Engineering Hong Kong University Of Science And Technology
-
Wang Ruonan
Department Of Cardiology Beijing Novartis Pharma Co. Ltd.
-
Lau Kei
Department of Electronic and Computer Engineering, Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong
-
Tang Wilson
Department of Electronic and Computer Engineering, Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong
-
Wang Ruonan
Department of Electronic and Computer Engineering, Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong
-
Cai Yong
Department of Electronic and Computer Engineering, Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong
関連論文
- Scanning Laser Polarimetry in Patients with Acute Attack of Primary Angle Closure
- Invited Channel Engineering of 3-Nitride HEMTs for Enhanced Device Performance (先端デバイスの基礎と応用に関するアジアワークショップ(AWAD2005))
- Invited Channel Engineering of 3-Nitride HEMTs for Enhanced Device Performance (先端デバイスの基礎と応用に関するアジアワークショップ(AWAD2005))
- Device Isolation by Plasma Treatment for Planar Integration of E/D-mode AlGaN/GaN HEMTs
- GaN-based Direct-coupled FET Logic (DCFL) Digital Circuits Operating at 375℃
- Enhancement-Mode AlGaN/GaN HEMTs with Low On-Resistance and Low Knee-Voltage(GaN-Based Devices,Heterostructure Microelectronics with TWHM2005)
- Gain Improvement of Enhancement-mode AlGaN/GaN HEMTs Using Dual-Gate Architectures
- 0.5μm Silicon-on Sapphire Metal Oxide Semiconductor Field Effect Transistor for RF Power Amplifier Applications
- High-Gain and High-Bandwidth AlGaN/GaN High Electron Mobility Transistor Comparator with High-Temperature Operation
- EVALUATING MODEL UNCERTAINTY OF AN SPT-BASED SIMPLIFIED METHOD FOR RELIABILITY ANALYSIS FOR PROBABILITY OF LIQUEFACTION
- Schottky Source/Drain InAlN/GaN Metal-Insulator-Semiconductor High-Electron-Mobility Transistor with High Breakdown Voltage and Low On-Resistance (Special Issue : Solid State Devices and Materials (2))
- High-Electron-Mobility InN Layers Grown by Boundary-Temperature-Controlled Epitaxy
- Efficacy and safety of aliskiren, a direct renin inhibitor, compared with ramipril in Asian patients with mild to moderate hypertension
- AlGaN/GaN-on-Silicon Metal-Oxide-Semiconductor High-Electron-Mobility Transistor with Breakdown Voltage of 800V and On-State Resistance of 3mΩ・cm^2 Using a Complementary Metal-Oxide-Semiconductor Compatible Gold-Free Process
- Effects of structural and electronic characteristics of chalcones on the activation of peroxisome proliferator-activated receptor gamma (PPARγ)
- Inverted-Type InGaAs Metal-Oxide-Semiconductor High-Electron-Mobility Transistor on Si Substrate with Maximum Drain Current Exceeding 2A/mm
- Device Isolation by Plasma Treatment for Planar Integration of Enhancement/Depletion-Mode AlGaN/GaN High Electron Mobility Transistors
- AlGaN/GaN Metal--Oxide--Semiconductor High-Electron-Mobility Transistors with a High Breakdown Voltage of 1400 V and a Complementary Metal--Oxide--Semiconductor Compatible Gold-Free Process
- Enhancement-Mode LaLuO
- Integrated Over-Temperature Protection Circuit for GaN Smart Power ICs
- Device Technology for GaN Mixed-Signal Integrated Circuits
- Gain Improvement of Enhancement-Mode AlGaN/GaN High-Electron-Mobility Transistors Using Dual-Gate Architecture