Schottky Source/Drain InAlN/GaN Metal-Insulator-Semiconductor High-Electron-Mobility Transistor with High Breakdown Voltage and Low On-Resistance (Special Issue : Solid State Devices and Materials (2))

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概要

• 論文の詳細を見る

著者

• Zhou Qi

  Department Of Chemistry Wuhan University

• Chen Kevin

  Department Of Electrical And Electronic Engineering Hong Kong University Of Science And Technology

• Chen Hongwei

  Department Of Entomology South China Agricultural University

• Zhou Chunhua

  Department of Electronic and Computer Engineering, Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong SAR, China

• Feng Zhihong

  Science and Technology on ASIC Laboratory, Hebei Semiconductor Research Institute, Shijiazhuang, 050051, China

• Cai Shujun

  Science and Technology on ASIC Laboratory, Hebei Semiconductor Research Institute, Shijiazhuang, 050051, China

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• Schottky Source/Drain InAlN/GaN Metal-Insulator-Semiconductor High-Electron-Mobility Transistor with High Breakdown Voltage and Low On-Resistance (Special Issue : Solid State Devices and Materials (2))
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