Cai Shujun | Science and Technology on ASIC Laboratory, Hebei Semiconductor Research Institute, Shijiazhuang, 050051, China

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概要

関連著者

Zhou Qi
Department Of Chemistry Wuhan University
Chen Kevin
Department Of Electrical And Electronic Engineering Hong Kong University Of Science And Technology
Chen Hongwei
Department Of Entomology South China Agricultural University
Zhou Chunhua
Department of Electronic and Computer Engineering, Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong SAR, China
Feng Zhihong
Science and Technology on ASIC Laboratory, Hebei Semiconductor Research Institute, Shijiazhuang, 050051, China
Cai Shujun
Science and Technology on ASIC Laboratory, Hebei Semiconductor Research Institute, Shijiazhuang, 050051, China

著作論文

Schottky Source/Drain InAlN/GaN Metal-Insulator-Semiconductor High-Electron-Mobility Transistor with High Breakdown Voltage and Low On-Resistance (Special Issue : Solid State Devices and Materials (2))

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