High-Gain and High-Bandwidth AlGaN/GaN High Electron Mobility Transistor Comparator with High-Temperature Operation
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概要
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This paper presents the dc and dynamic characterizations of a GaN-based voltage comparator, fabricated with monolithic integration of enhancement-mode (E-mode) and depletion-mode (D-mode) AlGaN/GaN high electron mobility transistors (HEMTs). The comparator features high gain ($>31$ dB) and wide bandwidth ($>4$ MHz), and small propagation delay time ($<20$ ns) over a wide temperature range up to 250 °C. Its dc gain is still 27.1 dB at 400 °C. These results demonstrate the potential of the AlGaN/GaN HEMT technology for mixed-signal integrated circuits used in GaN power electronics that promises high-voltage, high-current, and high-temperature operation.
- 2011-04-25
著者
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Chen Kevin
Department Of Electrical And Electronic Engineering Hong Kong University Of Science And Technology
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Wong King
Department of Electronic and Computer Engineering, Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong SAR, China
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Kwan Alex
Department of Electronic and Computer Engineering, Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong SAR, China
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Liu Xiaosen
Department of Electronic and Computer Engineering, Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong SAR, China
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