Gain Improvement of Enhancement-Mode AlGaN/GaN High-Electron-Mobility Transistors Using Dual-Gate Architecture

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概要

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• We demonstrate a dual-gate (DG) AlGaN/GaN high-electron-mobility transistor (HEMT) structure with enhancement-mode (E-mode) operation. The DG device consists of an E-mode gate and a depletion-mode (D-mode) gate instead of the dual D-mode gate electrodes used in previously reported works; thus no negative voltage supply is required when the DG device is used in amplifier circuits. The E-mode DG HEMTs exhibit similar DC characteristics to E-mode single-gate devices but show a 9 dB gain improvement at 2.1 GHz under the same bias conditions. The power gain improvement can be attributed to the higher output impedance and lower feedback capacitance in the DG structure.

• Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
• 2008-04-25

著者

• Chen Kevin

  Department Of Electrical And Electronic Engineering Hong Kong University Of Science And Technology

• Wu Yichao

  Department Of Electronic And Computer Engineering Hong Kong University Of Science And Technology

• Wang Ruonan

  Department Of Cardiology Beijing Novartis Pharma Co. Ltd.

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