Enhancement-Mode LaLuO
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概要
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In this work, enhancement-mode (E-mode) AlGaN/GaN metal--insulator--semiconductor high-electron-mobility transistors (MIS-HEMTs) with high-\kappa LaLuO<inf>3</inf>(LLO) gate dielectric were fabricated by deploying the CF<inf>4</inf>plasma treatment technique in a gate-dielectric-first planar process. CF<inf>4</inf>plasma treatment can shift the threshold voltage from -2.3 V [for depletion-mode (D-mode) LLO MIS-HEMTs] to 0.6 V (for E-mode LLO MIS-HEMTs). Transmission electron microscopy (TEM) and X-ray photoelectron spectroscopy (XPS) results suggest that fluorine ions could penetrate through the polycrystalline/amorphous LLO film and be implanted into the (Al)GaN barrier layer. The primary threshold voltage (V_{\text{TH}}) shift mechanism of the E-mode LLO MIS-HEMTs is the negatively-charged fluorine ions in (Al)GaN, while fluorine atoms form chemical bonds with La/Lu atoms in the fluorinated LLO film. The E-mode LLO MIS-HEMTs exhibit a drive drain current density of 352 mA/mm at V_{\text{GS}} = 2.5 V and a peak transconductance (G_{\text{m}}) of {\sim}193 mS/mm. Significant suppression of current collapse and low dynamic ON-resistance are obtained in the E-mode LLO MIS-HEMTs under high-drain-bias switching conditions.
- 2013-08-25
著者
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Chen Kevin
Department Of Electrical And Electronic Engineering Hong Kong University Of Science And Technology
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Yang Shu
Department Of Medical Information And Medical Records Nagoya University Hospital
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Huang Sen
Department Of Anatomy And Cell Biology The George Washington University Medical Center
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Zhao Qing-Tai
Peter Grünberg Institute (PGI-9), Forschungszentrum Jülich, 52425 Jülich, Germany
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Schubert Jürgen
Peter Grünberg Institute (PGI-9), Forschungszentrum Jülich, 52425 Jülich, Germany
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Schnee Michael
Peter Grünberg Institute (PGI-9), Forschungszentrum Jülich, 52425 Jülich, Germany
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Schubert Jürgen
Peter Grünberg Institute (PGI-9), Forschungszentrum Jülich, 52425 Jülich, Germany
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Schnee Michael
Peter Grünberg Institute (PGI-9), Forschungszentrum Jülich, 52425 Jülich, Germany
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Huang Sen
Department of Electronic and Computer Engineering, Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong
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Yang Shu
Department of Electronic and Computer Engineering, Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong
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