Device Technology for GaN Mixed-Signal Integrated Circuits
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概要
- 論文の詳細を見る
A device technology platform for implementing GaN mixed-signal integrated circuits is presented. High-performance GaN enhancement-/depletion-mode (E/D-mode) high electron mobility transistors (HEMTs) are the key devices for implementing digital/analog functional blocks, while Schottky diodes and lateral field-effect rectifiers provide useful components for sensing circuits. As a case study, a GaN 2-bit quantizer circuit fabricated on that platform is demonstrated, leading a way to highly integrated system-on-chip solutions for protection/sense/control applications.
- The Japan Society of Applied Physicsの論文
- 2013-11-25
著者
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Chen Kevin
Department Of Electrical And Electronic Engineering Hong Kong University Of Science And Technology
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Kwan Alex
Department of Electronic and Computer Engineering, Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong SAR, China
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Chen Kevin
Department of Electronic and Computer Engineering, Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong, China
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