Switching Model of TaOx-Based Nonpolar Resistive Random Access Memory (Special Issue : Solid State Devices and Materials)
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概要
著者
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Yeo Yee-chia
Department Of Electrical And Computer Engineering National University Of Singapore
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Liu Zhe
Department Of Anesthesiology Gongli Hospital
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Yu Hong
South University of Science and Technology of China, Shenzhen, 518055 China
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Wu Wenjuan
Department of Electrical and Computer Engineering, National University of Singapore (NUS), 117576 Singapore
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Tong Xin
Department of Electrical and Computer Engineering, National University of Singapore (NUS), 117576 Singapore
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Tran Xuan
School of EEE, Nanyang Technological University, 639798 Singapore
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Yeo Yee-Chia
Department of Electrical and Computer Engineering, National University of Singapore (NUS), 117576 Singapore
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- Switching Model of TaOx-Based Nonpolar Resistive Random Access Memory (Special Issue : Solid State Devices and Materials)