Device Physics and Design of a L-Shaped Germanium Source Tunneling Transistor
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概要
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A novel tunneling field-effect transistor (TFET) with an L-shaped Ge source is investigated. The device comprises a Ge source that extends underneath a Si-channel region and separated from the drain by an insulator (SiO2). By optimizing the overlap length of the extended source L_{\text{OV}} and the Si body thickness T_{\text{Si}}, the current due to vertical band-to-band tunneling (BTBT) of the Ge--Si hetero-junction could be increased significantly and is scalable with L_{\text{OV}}. This leads to higher I_{\text{ON}} and improved S. The SiO2 also reduces OFF-state current I_{\text{OFF}} by blocking leakage paths. With extensive simulation, the device physics and design guidelines of this novel structure are outlined.
- 2012-02-25
著者
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Yeo Yee-chia
Department Of Electrical And Computer Engineering National University Of Singapore
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Zhan Chunlei
Department Of Electrical And Computer Engineering National University Of Singapore
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Yeo Yee-Chia
Department of Electrical and Computer Engineering, National University of Singapore, 117576, Singapore
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Goh Kian-Hui
Department of Electrical and Computer Engineering, National University of Singapore, 117576, Singapore
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Low Kain
Department of Electrical and Computer Engineering, National University of Singapore, 117576, Singapore
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Han Genquan
Department of Electrical and Computer Engineering, National University of Singapore, 117576, Singapore
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Yang Yue
Department of Electrical and Computer Engineering, National University of Singapore, 117576, Singapore
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Guo Pengfei
Department of Electrical and Computer Engineering, National University of Singapore, 117576, Singapore
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Toh Eng-Huat
GLOBALFOUNDRIES Singapore Pte. Ltd., 60 Woodlands Industrial Park D Street 2, 738406, Singapore
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Zhan Chunlei
Department of Electrical and Computer Engineering, National University of Singapore, 117576, Singapore
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