OWEN Man | Department of Electrical and Computer Engineering, National University of Singapore
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概要
関連著者
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Yeo Yee-chia
Department Of Electrical And Computer Engineering National University Of Singapore
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OWEN Man
Department of Electrical and Computer Engineering, National University of Singapore
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Chen Kevin
Department Of Electrical And Electronic Engineering Hong Kong University Of Science And Technology
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Yoon Soon
School Of Electrical And Electronic Engineering Nanyang Technological University
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Chan Kwok
Department Of Biology The Hong Kong University Of Science And Technology
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CHI Dong
Institute of Materials Research and Engineering
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Tan Leng
Department Of Electrical And Computer Engineering National University Of Singapore
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Liu Wei
Luminous! Centre Of Excellence For Semiconductor Lighting And Displays Nanyang Technological University
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Zhan Chunlei
Department Of Electrical And Computer Engineering National University Of Singapore
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Liu Xinke
Department Of Electrical And Computer Engineering National University Of Singapore
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TAN Kian
School of Electrical and Electronic Engineering, Nanyang Technological University (NTU)
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SUBRAMANIAN Sujith
Department of Electrical and Computer Engineering, National University of Singapore
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LOKE Wan
School of Electrical and Electronic Engineering, Nanyang Technological University (NTU)
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WICAKSONO Satrio
School of Electrical and Electronic Engineering, Nanyang Technological University (NTU)
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Owen Man
Department of Electrical and Computer Engineering, National University of Singapore, Singapore 117576
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Chi Dong
Institute of Materials Research and Engineering, Agency for Science Technology and Research, Singapore 117602
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Tan Leng
Department of Electrical and Computer Engineering, National University of Singapore, Singapore 117576
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Chan Kwok
Department of Electronic and Computer Engineering, Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong
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Liu Wei
Luminous! Centre of Excellence for Semiconductor Lighting and Displays, Nanyang Technological University, Singapore 639785
著作論文
- AlGaN/GaN Metal--Oxide--Semiconductor High-Electron-Mobility Transistors with a High Breakdown Voltage of 1400 V and a Complementary Metal--Oxide--Semiconductor Compatible Gold-Free Process
- N-Channel InGaAs Field-Effect Transistors formed on Germanium-on-Insulator Substrates