Pressure Collapse of Kondo Gap in Kondo Compound CeRhSb
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概要
- 論文の詳細を見る
The effect of pressure on the electrical resistivity of CeRhSb has been studied up to 80 kbar in order to elucidate the electronic Properties of CeRhSb at low temperature. It is found that the Kondo temperature increases with pressure and gap is quenched at P=80 kbar, showing a maximum around 30 kbar.
- Physical Society of Japanの論文
- 1996-01-15
著者
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Thompson J.
Los Alamos National Lab
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Fisk Z.
Florida State UniV.
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TAKAHASI Hiroki
ISSP, University of Tokyo
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MORI Nobuo
ISSP, University of Tokyo
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SHERO J.
Florida State University and National High Magnetic Field Laboratory
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MADRU D.
Oak Ridge National Laboratory
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Ishii Takayuki
Department Of Biochemistry Hoshi University
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Oomi Gendo
Department Of Mechanical Engineering And Materials Science Faculty Of Engineering Kumamoto Universit
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Uwatoko Yoshiya
Faculty Of General Education Kumamoto University
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Oomi Gendo
Department of Physics, Faculty of General Education, Kumamoto University, Kumamoto 860
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Uwatoko Yoshiya
Faculty of Science, Saitama University, Urawa 338
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Fisk Z.
Florida State University and National High Magnetic Field Laboratory, Tallahassee, FL 32306, U.S.A.
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Ishii Takayuki
Department of Physics, Faculty of General Education, Kumamoto University, Kumamoto 860
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Ishii Takayuki
Department of Applied Chemistry, Faculty of Engineering, Kanagawa University
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Takahasi Hiroki
ISSP, University of Tokyo, Tokyo 106
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