Effect of Pressure on the Giant Magnetoresistance in Co/Cu Magnetic Multilayers(Condensed Matter : Electronic Structure, Electrical, Magnetic and Optical Properties)

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The effect of pressure and magnetic field on the temperature dependent electrical resistivity ρ(T) of the [Co(1.02nm)/Cu(t_<Cu>nm)]_<25> magnetic multilayers (MML) with t_<Cu>=0.76 [ferromagnetic (F)] and 1.05 [antiferromagnetic (AF)] has been investigated at low temperature. MR ratio Δρ/ρ_s for t_<Cu>=1.05 and 0.76 decreases with increasing pressure. The pressure dependent Δρ/ρ_s for t_<Cu>=1.05 is more significant than that for 0.76. ρ(T) at H=0 and above saturation field H_s (H=2T) for Co/Cu MMLs is found to show T^2-dependence in the relatively wide temperature range, 4.2≤T≤20K, at low temperature. The coefficient of T^2 term (=A) for F-state is larger than that for AF-state at ambient pressure. The change of A for t_<Cu>=1.05 at H=0 is smaller than that at H=2T. These results are discussed on the basis of the electron scattering at interfaces due to magnons or spin-wave.
2006-02-15