Optical Gain in GaN Quantum Well Lasers with Quaternary AlInGaN Barriers
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概要
- 論文の詳細を見る
Optical gain in GaN quantum-well (QW) lasers with quaternary AlInGaN barriers lattice-matched to GaN is investigated on the basis of the multiband effective-mass theory and is compared with that of conventional GaN/AlGaN QW structures. GaN/AlInGaN QW lasers are expected to have enhanced optical gain compared with GaN/AlInGaN QW lasers. However, the optical gain is shown to be reduced markedly with increasing band gap of the AlInGaN barrier. This is because the spontaneous polarization effect is increased significantly for the QW structures with a larger AlInGaN band gap. We find that the threshold current density of the GaN/AlInGaN QW structure can be reduced using a quarternary AlInGaN barrier.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2005-10-15
著者
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Ahn Doyeol
Institute Of Quantum Information & Processing Systems University Of Seoul
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Park Seoung-hwan
Department Of Electronic Engineering Catholic University Of Daegu
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Kim Hwa-min
Department Of Electronics Engineering Catholic University Of Daegu
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Park Seoung-Hwan
Department of Photonics and Information Engineering, Catholic University of Daegu, Hayang, Kyeongsan, Kyeongbuk 712-702, Korea
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Kim Hwa-Min
Department of Photonics and Information Engineering, Catholic University of Daegu, Hayang, Kyeongsan, Kyeongbuk 712-702, Korea
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Kim Hwa-Min
Department of Advanced Energy Material Science and Engineering, Catholic University of Daegu, Gyeongsan, Gyeongbuk 712-702, Republic of Korea
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