Intraband Relaxation Time in Wurtzite GaN/AlGaN Quantum-Well Structures with Spontaneous Polarization Effects
スポンサーリンク
概要
- 論文の詳細を見る
Spontaneous (SP) and piezoelectric (PZ) polarization effects on the intraband relaxation time for wurtzite (WZ) GaN/AlGaN quantum wells (QWs) are investigated theoretically as functions of structural parameters. These are also compared with the data for the flat-band (FB) model without an internal field. The linewidths for the carrier-carrier and carrier-phonon scatterings of the FB model are almost constant irrespective of the Al composition, while those of the self-consistent (SC) model decrease with the increase of the Al composition except for the h-ph scattering. Also, it is observed that the linewidths of the SC model are significantly reduced compared with those for the FB model, except for the h-ph scattering. The h-ph scattering for the SC model below $\hbar \omega_{\text{LO}}$ has linewidths larger than the FB model due to the increase of the term related to the Fermi functions. The linewidths of both FB and SC models are almost constant irrespective of the well width, except for the e-h and h-e scatterings of the SC model. In the case of the e-h and h-e scatterings, the linewidths greatly decrease with the well width because of the increase of the spatial separation of wave functions. It is shown that the linewidths of both FB and SC models are a weak function of the barrier width.
- Publication Office, Japanese Journal of Applied Physics, Faculty of Science, University of Tokyoの論文
- 2001-07-15
著者
-
Park Seoung-hwan
Department Of Electronic Engineering Catholic University Of Daegu
-
Park Seoung-Hwan
Department of Physics, Catholic University of Taegu, Hayang, Kyeongbuk, Korea
関連論文
- Optical Gain Calculation for Strained Quantum Well Lasers by the Fourier Expansion Method
- Spontaneous Polarization and Piezoelectric Effects on Inter-Subband Scattering Rate in Wurtzite GaN/AlGaN Quantum-Well : Optics and Quantum Electronics
- Screening Effects on Electron-Longitudinal Optical-Phonon Intersubband Scattering in Wide Quantum Well and Comparison with Experiment
- Negative Resistance of AlGaAs Diodes Co-doped with Si and Mn
- Bandgap Effects of Quantum Well Active-Layer on Threshold Current Density, Differential Gain and Temperature Characteristics of 1.3μm InGaAlAs/InP Quantum Well Lasers
- High Temperature Characteristics of Strained InGaAs/InGaAlAs Quantum Well Lasers
- Optical Gain in Wurtzite ZnO/ZnMgO Quantum Well Lasers
- Optical Properties of Staggered InGaN/InGaN/GaN Quantum-Well Structures with Ga- and N-Faces
- Barrier-Width Effects on Electronic Properties of GaAsSb/GaAs Quantum Well Structures
- Electronic and Optical Properties of 1.55 μm GaInNAs/GaAs Quantum-Well Structures
- On the Theory of Optical Gain of Strained-Layer Hexagonal and Cubic GaN Quantum-Well Lasers
- Crystal Orientation Effects on Electronic Properties of Wurtzite GaN/AlGaN Quantum Wells with Spontaneous and Piezoelectric Polarization
- Intraband Relaxation Time in Wurtzite GaN/InAlN Quantum-Well
- Structural Dependence of Electronic Properties in (1010) Wurtzite GaN/AlGaN Quantum Wells
- Intraband Relaxation Time in Wurtzite GaN/AlGaN Quantum-Well Structures with Spontaneous Polarization Effects
- Effects of Oxygen Concentration on Characteristics of RF-Sputtered In2O3–ZnO Thin Films
- Piezoelectric and Spontaneous Polarization Effects on Many-Body Optical Gain of Wurtzite InGaN/GaN Quantum Well with Arbitrary Crystal Orientation
- Optical Gain in GaN Quantum Well Lasers with Quaternary AlInGaN Barriers
- Optical Properties of Strained CdTe/ZnTe Pyramidal Quantum Dots
- Crystal Orientation Effects on Many-Body Optical Gain of Wurtzite InGaN/GaN Quantum Well Lasers
- Exciton Binding Energies in Zincblende GaN/AlGaN Quantum Wells
- Structure Parameters and Electric Field Effects on Exciton Binding Energies of CdTe/ZnTe Quantum Rings
- Structure Parameters and Electric Field Effects on Exciton Binding Energies of CdTe/ZnTe Quantum Rings