Bandgap Effects of Quantum Well Active-Layer on Threshold Current Density, Differential Gain and Temperature Characteristics of 1.3μm InGaAlAs/InP Quantum Well Lasers
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 2002-03-15
著者
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Park S‐h
Catholic Univ. Daegu Kyeongbuk Kor
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Bae Seong-ju
Department Of Information And Communications Kwangju Institute Of Science And Technology
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Lee Yong-tak
Department Of Information And Communications Kwangju Institute Of Science And Technology
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Lee Yong-tak
Department Of Electronic Engineering University Of Tokyo:(present Address) Electronics And Telecommu
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PARK Seoung-Hwan
Department of Physics, Catholic University of Taegu
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Park Seoung-hwan
Department Of Electronic Engineering Catholic University Of Daegu
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- Spontaneous Polarization and Piezoelectric Effects on Inter-Subband Scattering Rate in Wurtzite GaN/AlGaN Quantum-Well : Optics and Quantum Electronics
- Screening Effects on Electron-Longitudinal Optical-Phonon Intersubband Scattering in Wide Quantum Well and Comparison with Experiment
- Negative Resistance of AlGaAs Diodes Co-doped with Si and Mn
- Bandgap Effects of Quantum Well Active-Layer on Threshold Current Density, Differential Gain and Temperature Characteristics of 1.3μm InGaAlAs/InP Quantum Well Lasers
- Electronic and Optical Properties of 1.55μm GaInNAs/GaAs Quantum-Well Structures
- Electronic Properties of InGaAs/GaAs Strained Coupled Quantum Dots Modeled by Eight-Band k・p Theory
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- Optical Properties of Staggered InGaN/InGaN/GaN Quantum-Well Structures with Ga- and N-Faces
- Effect of Modified Growth Method on the Structural and Optical Properties of InAs/GaAs Quantum Dots for Controlling Density
- Effect of Growth Interruption in Migration Enhanced Epitaxy on InAs/GaAs Quantum Dots
- Barrier-Width Effects on Electronic Properties of GaAsSb/GaAs Quantum Well Structures
- Electronic and Optical Properties of 1.55 μm GaInNAs/GaAs Quantum-Well Structures
- On the Theory of Optical Gain of Strained-Layer Hexagonal and Cubic GaN Quantum-Well Lasers
- Crystal Orientation Effects on Electronic Properties of Wurtzite GaN/AlGaN Quantum Wells with Spontaneous and Piezoelectric Polarization
- Intraband Relaxation Time in Wurtzite GaN/InAlN Quantum-Well
- Structural Dependence of Electronic Properties in (1010) Wurtzite GaN/AlGaN Quantum Wells
- Intraband Relaxation Time in Wurtzite GaN/AlGaN Quantum-Well Structures with Spontaneous Polarization Effects
- Effects of Oxygen Concentration on Characteristics of RF-Sputtered In2O3–ZnO Thin Films
- Piezoelectric and Spontaneous Polarization Effects on Many-Body Optical Gain of Wurtzite InGaN/GaN Quantum Well with Arbitrary Crystal Orientation
- Optical Gain in GaN Quantum Well Lasers with Quaternary AlInGaN Barriers
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- Crystal Orientation Effects on Many-Body Optical Gain of Wurtzite InGaN/GaN Quantum Well Lasers
- Electronic Properties of InGaAs/GaAs Strained Coupled Quantum Dots Modeled by Eight-Band $\mathbf{k \cdot p}$ Theory
- Exciton Binding Energies in Zincblende GaN/AlGaN Quantum Wells
- Structure Parameters and Electric Field Effects on Exciton Binding Energies of CdTe/ZnTe Quantum Rings
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