Piezoelectric and Spontaneous Polarization Effects on Many-Body Optical Gain of Wurtzite InGaN/GaN Quantum Well with Arbitrary Crystal Orientation
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概要
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The piezoelectric (PZ) and spontaneous (SP) polarization effects on the optical gain of wurtzite (WZ) InGaN/GaN quantum wells (QWs) with an arbitrary crystal orientation were investigated using the non-Markovian gain model with many-body effects. The difference of the SP polarization between the well and the barrier is shown to be very small and neglecting SP polarization is a good approximation in InGaN/GaN QW system. A self-consistent model with PZ and SP polarization effects shows that many-body optical gain is significantly reduced near $\theta=0$°, compared to the flat-band model. This can be explained by the reduction of the matrix elements near $\theta=0$° due to PZ and SP polarization. It was found that PZ and SP polarization effects are nearly negligible for crystal angles above $\theta=50$°.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2003-08-15
著者
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Park Seoung-hwan
Department Of Electronic Engineering Catholic University Of Daegu
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Park Seoung-Hwan
Department of Physics and Semiconductor Science, Catholic University of Daegu, Hayang, Kyeongbuk, Korea
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