Electronic and Optical Properties of 1.55 μm GaInNAs/GaAs Quantum-Well Structures
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概要
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The electronic and optical properties of 1.55 μm GaInNAs/GaAs quantum-well (QW) lasers are investigated using the multiband effective-mass theory. The results are compared to those of 1.3 μm GaInNAs/GaAs QW lasers. The QW structure with a wavelength of 1.55 μm has a smaller strain in the well than that with a wavelength of 1.3 μm. The 1.55 μm QW structure is shown to have a smaller optical gain than the 1.3 μm QW structure. This is mainly attributed to the fact that the former has a smaller matrix element and a larger average effective mass than the latter. However, the difference in the optical gain between the two QW structures is greatly reduced with increasing well width. In the case of a QW structure with a well width of $L_{\text{w}}=80$ Å, the optical gain of the QW structure with a wavelength of 1.55 μm is found to be similar to that of the QW structure with a wavelength of 1.3 μm.
- 2007-01-15
著者
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Ahn Doyeol
Institute Of Quantum Information & Processing Systems University Of Seoul
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Park Seoung-hwan
Department Of Electronic Engineering Catholic University Of Daegu
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Kim Hwa-min
Department Of Electronics Engineering Catholic University Of Daegu
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KIM Hae
School of Computer and Information Communication Engineering, Catholic University of Daegu
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Park Seoung-Hwan
Department of Electronics Engineering, Catholic University of Daegu, Hayang, Kyeongsan, Kyeongbuk 712-702, Korea
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Ahn Doyeol
Institute of Quantum Information Processing and Systems, University of Seoul, 90 Jeonnong, Tongdaimoon-Gu, Seoul 130-743, Korea
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Kim Hwa-Min
Department of Electronics Engineering, Catholic University of Daegu, Hayang, Kyeongsan, Kyeongbuk 712-702, Korea
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Kim Hae
School of Computer and Information Communication Enginnering, Catholic University of Daegu, Hayang, Kyeongsan, Kyeongbuk 712-702, Korea
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Kim Hwa-Min
Department of Advanced Energy Material Science and Engineering, Catholic University of Daegu, Gyeongsan, Gyeongbuk 712-702, Republic of Korea
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