A unified analytical SOI MOSFET model for fully- and partially-depleted SOI devices

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概要

• 論文の詳細を見る

• We present a new unified analytical front surface potential model. It is valid in all regions of operation (from the sub-threshold to the strong inversion) and an analytical expression for the critical voltage V_C delineating the partially depleted (PD) and the fully depleted (FD) region is introduced. The drift/diffusion equation is used to derive a single formula for the drain current valid in all regions of operation. The model has been fit to a range of the Si film thickness t_<si> values of SOI device.

• 社団法人電子情報通信学会の論文
• 2001-06-30

著者

• AHN Doyeol

  Institute of Quantum Information Processing and Systems (iQUIPS), University of Seoul

• HWANG Sung

  Department of Electronics Engineering, Korea University

• Hwang Sung

  Korea Univ. Seoul Kor

• Ahn Doyeol

  Institute Of Quantum Information & Processing Systems University Of Seoul

• Hwang Sung

  Department Of Electronics And Computer Engineering Korea University

• Hwang S

  Department Of Electronics And Computer Engineering Korea University

• Yu Yun

  Department Of Electronics Engineering Korea University:institute Of Quantum Information & Proces

• Hwang Sung

  Department of Electronic and Computer Engineering, Korea University, Anam, Sungbuk, Seoul 136-075, Korea

• Hwang Sung

  Department of Chemistry, Sahmyook University

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